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Investigation of the InAs/GaAs Quantum Dots' Size: Dependence on the Strain Reducing Layer's Position.
Materials (Basel). 2015 Jul 24;8(8):4699-4709. doi: 10.3390/ma8084699.
Materials (Basel). 2015.
PMID: 28793465
Free PMC article.
Detecting Spatially Localized Exciton in Self-Organized InAs/InGaAs Quantum Dot Superlattices: a Way to Improve the Photovoltaic Efficiency.
Ezzedini M, Hidouri T, Alouane MHH, Sayari A, Shalaan E, Chauvin N, Sfaxi L, Saidi F, Al-Ghamdi A, Bru-Chevallier C, Maaref H.
Ezzedini M, et al. Among authors: alouane mhh.
Nanoscale Res Lett. 2017 Dec;12(1):450. doi: 10.1186/s11671-017-2218-2. Epub 2017 Jul 11.
Nanoscale Res Lett. 2017.
PMID: 28697588
Free PMC article.
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Structural and Optical Characteristics of Highly UV-Blue Luminescent ZnNiO Nanoparticles Prepared by Sol-Gel Method.
Farha AH, Al Naim AF, Mazher J, Nasr O, Alouane MHH.
Farha AH, et al. Among authors: alouane mhh.
Materials (Basel). 2020 Feb 15;13(4):879. doi: 10.3390/ma13040879.
Materials (Basel). 2020.
PMID: 32075345
Free PMC article.
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Temperature dependent photoluminescence properties of InAs/InP quantum dashes subjected to low energy phosphorous ion implantation and subsequent annealing.
Alouane MH, Ilahi B, Maaref H, Salem B, Aimez V, Morris D, Gendry M.
Alouane MH, et al.
J Nanosci Nanotechnol. 2011 Oct;11(10):9251-5. doi: 10.1166/jnn.2011.4298.
J Nanosci Nanotechnol. 2011.
PMID: 22400332
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Wurtzite InP/InAs/InP core-shell nanowires emitting at telecommunication wavelengths on Si substrate.
Alouane MH, Anufriev R, Chauvin N, Khmissi H, Naji K, Ilahi B, Maaref H, Patriarche G, Gendry M, Bru-Chevallier C.
Alouane MH, et al.
Nanotechnology. 2011 Oct 7;22(40):405702. doi: 10.1088/0957-4484/22/40/405702. Epub 2011 Sep 12.
Nanotechnology. 2011.
PMID: 21911925
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