Search Page
Save citations to file
Email citations
Send citations to clipboard
Add to Collections
Add to My Bibliography
Create a file for external citation management software
Your saved search
Your RSS Feed
Filters
Results by year
Table representation of search results timeline featuring number of search results per year.
Year | Number of Results |
---|---|
2019 | 1 |
2021 | 3 |
2024 | 0 |
Search Results
4 results
Results by year
Filters applied: . Clear all
Page 1
Materials and Processes for Schottky Contacts on Silicon Carbide.
Materials (Basel). 2021 Dec 31;15(1):298. doi: 10.3390/ma15010298.
Materials (Basel). 2021.
PMID: 35009445
Free PMC article.
Review.
Selective Doping in Silicon Carbide Power Devices.
Roccaforte F, Fiorenza P, Vivona M, Greco G, Giannazzo F.
Roccaforte F, et al.
Materials (Basel). 2021 Jul 14;14(14):3923. doi: 10.3390/ma14143923.
Materials (Basel). 2021.
PMID: 34300845
Free PMC article.
Review.
Item in Clipboard
High-Resolution Two-Dimensional Imaging of the 4H-SiC MOSFET Channel by Scanning Capacitance Microscopy.
Fiorenza P, Alessandrino MS, Carbone B, Russo A, Roccaforte F, Giannazzo F.
Fiorenza P, et al.
Nanomaterials (Basel). 2021 Jun 21;11(6):1626. doi: 10.3390/nano11061626.
Nanomaterials (Basel). 2021.
PMID: 34205790
Free PMC article.
Item in Clipboard
Ohmic Contacts on p-Type Al-Implanted 4H-SiC Layers after Different Post-Implantation Annealings.
Spera M, Greco G, Corso D, Di Franco S, Severino A, Messina AA, Giannazzo F, Roccaforte F.
Spera M, et al.
Materials (Basel). 2019 Oct 23;12(21):3468. doi: 10.3390/ma12213468.
Materials (Basel). 2019.
PMID: 31652698
Free PMC article.
Item in Clipboard
Cite
Cite