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Investigation on Capacitance Collapse Induced by Secondary Capture of Acceptor Traps in AlGaN/GaN Lateral Schottky Barrier Diode.
Micromachines (Basel). 2022 May 9;13(5):748. doi: 10.3390/mi13050748.
Micromachines (Basel). 2022.
PMID: 35630215
Free PMC article.
Investigation on Dynamic Characteristics of AlGaN/GaN Lateral Schottky Barrier Diode.
Zhang H, Kang X, Zheng Y, Wu H, Wei K, Liu X, Ye T, Jin Z.
Zhang H, et al.
Micromachines (Basel). 2021 Oct 22;12(11):1296. doi: 10.3390/mi12111296.
Micromachines (Basel). 2021.
PMID: 34832708
Free PMC article.
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