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Table representation of search results timeline featuring number of search results per year.
Year | Number of Results |
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2018 | 1 |
2019 | 2 |
2024 | 0 |
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Simulation Study of 4H-SiC Trench Insulated Gate Bipolar Transistor with Low Turn-Off Loss.
Micromachines (Basel). 2019 Nov 26;10(12):815. doi: 10.3390/mi10120815.
Micromachines (Basel). 2019.
PMID: 31779077
Free PMC article.
A Breakdown Enhanced AlGaN/GaN Schottky Barrier Diode with the T-Anode Position Deep into the Bottom Buffer Layer.
Sun Y, Wang Y, Tang J, Wang W, Huang Y, Kuang X.
Sun Y, et al.
Micromachines (Basel). 2019 Jan 26;10(2):91. doi: 10.3390/mi10020091.
Micromachines (Basel). 2019.
PMID: 30691138
Free PMC article.
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Step-Double-Zone-JTE for SiC Devices with Increased Tolerance to JTE Dose and Surface Charges.
Huang Y, Wang Y, Kuang X, Wang W, Tang J, Sun Y.
Huang Y, et al.
Micromachines (Basel). 2018 Nov 22;9(12):610. doi: 10.3390/mi9120610.
Micromachines (Basel). 2018.
PMID: 30469458
Free PMC article.
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