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Simulation of Single-Event Transient Effect for GaN High-Electron-Mobility Transistor.
Wang Z, Cao Y, Zhang X, Chen C, Wu L, Ma M, Lv H, Lv L, Zheng X, Tian W, Ma X, Hao Y. Wang Z, et al. Micromachines (Basel). 2023 Oct 19;14(10):1948. doi: 10.3390/mi14101948. Micromachines (Basel). 2023. PMID: 37893385 Free PMC article.
By constructing a two-dimensional structure of GaN HEMT, combined with key models such as carrier mobility, the effects of a different state, different incidence position, different drain voltage, different LET values, and a different incidence angle on the single-event tr …
By constructing a two-dimensional structure of GaN HEMT, combined with key models such as carrier mobility, the effects of a differen …