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Table representation of search results timeline featuring number of search results per year.
Year | Number of Results |
---|---|
2022 | 2 |
2023 | 2 |
2024 | 0 |
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Page 1
Simulation of Single-Event Transient Effect for GaN High-Electron-Mobility Transistor.
Micromachines (Basel). 2023 Oct 19;14(10):1948. doi: 10.3390/mi14101948.
Micromachines (Basel). 2023.
PMID: 37893385
Free PMC article.
Effect of P-Type GaN Buried Layer on the Temperature of AlGaN/GaN HEMTs.
Lv H, Cao Y, Ma M, Wang Z, Zhang X, Chen C, Wu L, Lv L, Zheng X, Wang Y, Tian W, Ma X.
Lv H, et al.
Micromachines (Basel). 2023 Jul 20;14(7):1457. doi: 10.3390/mi14071457.
Micromachines (Basel). 2023.
PMID: 37512768
Free PMC article.
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Effect of Acceptor Traps in GaN Buffer Layer on Breakdown Performance of AlGaN/GaN HEMTs.
Ma M, Cao Y, Lv H, Wang Z, Zhang X, Chen C, Wu L, Lv L, Zheng X, Tian W, Ma X, Hao Y.
Ma M, et al.
Micromachines (Basel). 2022 Dec 28;14(1):79. doi: 10.3390/mi14010079.
Micromachines (Basel). 2022.
PMID: 36677140
Free PMC article.
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Combined Effect of TID Radiation and Electrical Stress on NMOSFETs.
Cao Y, Wang M, Zheng X, Zhang E, Lv L, Wang L, Ma M, Lv H, Wang Z, Wang Y, Tian W, Ma X, Hao Y.
Cao Y, et al.
Micromachines (Basel). 2022 Oct 29;13(11):1860. doi: 10.3390/mi13111860.
Micromachines (Basel). 2022.
PMID: 36363882
Free PMC article.
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