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Anomalous Temperature Dependence of Photoluminescence Caused by Non-Equilibrium Distributed Carriers in InGaN/(In)GaN Multiple Quantum Wells.
Nanomaterials (Basel). 2021 Apr 16;11(4):1023. doi: 10.3390/nano11041023.
Nanomaterials (Basel). 2021.
PMID: 33923643
Free PMC article.
Furthermore, a comparison analysis of MQWs sample with and without hydrogen treatment further demonstrates that the better quantum well is one of the key factors of this anomalous phenomenon....
Furthermore, a comparison analysis of MQWs sample with and without hydrogen treatment further demonstrates that the better quantum well is o …
Carrier Redistribution Between Two Kinds of Localized States in the InGaN/GaN Quantum Wells Studied by Photoluminescence.
Xing Y, Zhao D, Jiang D, Liu Z, Zhu J, Chen P, Yang J, Liang F, Liu S, Zhang L.
Xing Y, et al.
Nanoscale Res Lett. 2019 Mar 12;14(1):88. doi: 10.1186/s11671-019-2919-9.
Nanoscale Res Lett. 2019.
PMID: 30874975
Free PMC article.
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Role of Si and C Impurities in Yellow and Blue Luminescence of Unintentionally and Si-Doped GaN.
Liang F, Zhao D, Jiang D, Liu Z, Zhu J, Chen P, Yang J, Liu S, Xing Y, Zhang L.
Liang F, et al.
Nanomaterials (Basel). 2018 Dec 10;8(12):1026. doi: 10.3390/nano8121026.
Nanomaterials (Basel). 2018.
PMID: 30544659
Free PMC article.
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