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Growth and Selective Etch of Phosphorus-Doped Silicon/Silicon-Germanium Multilayers Structures for Vertical Transistors Application.
Nanoscale Res Lett. 2020 Dec 9;15(1):225. doi: 10.1186/s11671-020-03456-0.
Nanoscale Res Lett. 2020.
PMID: 33296038
Free PMC article.
Study of Silicon Nitride Inner Spacer Formation in Process of Gate-all-around Nano-Transistors.
Li J, Li Y, Zhou N, Xiong W, Wang G, Zhang Q, Du A, Gao J, Kong Z, Lin H, Xiang J, Li C, Yin X, Wang X, Yang H, Ma X, Han J, Zhang J, Hu T, Cao Z, Yang T, Li J, Yin H, Zhu H, Luo J, Wang W, Radamson HH.
Li J, et al.
Nanomaterials (Basel). 2020 Apr 20;10(4):793. doi: 10.3390/nano10040793.
Nanomaterials (Basel). 2020.
PMID: 32326106
Free PMC article.
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