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Cryogenic Transport Characteristics of P-Type Gate-All-Around Silicon Nanowire MOSFETs.
Nanomaterials (Basel). 2021 Jan 26;11(2):309. doi: 10.3390/nano11020309.
Nanomaterials (Basel). 2021.
PMID: 33530292
Free PMC article.
Investigate on the Mechanism of HfO2/Si0.7Ge0.3 Interface Passivation Based on Low-Temperature Ozone Oxidation and Si-Cap Methods.
Yao Q, Ma X, Wang H, Wang Y, Wang G, Zhang J, Liu W, Wang X, Yan J, Li Y, Wang W.
Yao Q, et al.
Nanomaterials (Basel). 2021 Apr 9;11(4):955. doi: 10.3390/nano11040955.
Nanomaterials (Basel). 2021.
PMID: 33918553
Free PMC article.
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Optimization of Structure and Electrical Characteristics for Four-Layer Vertically-Stacked Horizontal Gate-All-Around Si Nanosheets Devices.
Zhang Q, Gu J, Xu R, Cao L, Li J, Wu Z, Wang G, Yao J, Zhang Z, Xiang J, He X, Kong Z, Yang H, Tian J, Xu G, Mao S, Radamson HH, Yin H, Luo J.
Zhang Q, et al.
Nanomaterials (Basel). 2021 Mar 5;11(3):646. doi: 10.3390/nano11030646.
Nanomaterials (Basel). 2021.
PMID: 33808024
Free PMC article.
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