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Heteroepitaxial Growth of High-Quality and Crack-Free AlN Film on Sapphire Substrate with Nanometer-Scale-Thick AlN Nucleation Layer for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes.
Nanomaterials (Basel). 2019 Nov 17;9(11):1634. doi: 10.3390/nano9111634.
Nanomaterials (Basel). 2019.
PMID: 31744248
Free PMC article.
Effect of strain relaxation on performance of InGaN/GaN green LEDs grown on 4-inch sapphire substrate with sputtered AlN nucleation layer.
Hu H, Zhou S, Wan H, Liu X, Li N, Xu H.
Hu H, et al.
Sci Rep. 2019 Mar 5;9(1):3447. doi: 10.1038/s41598-019-40120-9.
Sci Rep. 2019.
PMID: 30837579
Free PMC article.
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