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High Breakdown Voltage and Low Buffer Trapping in Superlattice GaN-on-Silicon Heterostructures for High Voltage Applications.
Materials (Basel). 2020 Sep 25;13(19):4271. doi: 10.3390/ma13194271.
Materials (Basel). 2020.
PMID: 32992721
Free PMC article.
CH₄ Adsorption Probability on GaN(0001) and (000-1) during Metalorganic Vapor Phase Epitaxy and Its Relationship to Carbon Contamination in the Films.
Kusaba A, Li G, Kempisty P, von Spakovsky MR, Kangawa Y.
Kusaba A, et al.
Materials (Basel). 2019 Mar 23;12(6):972. doi: 10.3390/ma12060972.
Materials (Basel). 2019.
PMID: 30909584
Free PMC article.
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