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Investigate on the Mechanism of HfO2/Si0.7Ge0.3 Interface Passivation Based on Low-Temperature Ozone Oxidation and Si-Cap Methods.
Nanomaterials (Basel). 2021 Apr 9;11(4):955. doi: 10.3390/nano11040955.
Nanomaterials (Basel). 2021.
PMID: 33918553
Free PMC article.
Four-Period Vertically Stacked SiGe/Si Channel FinFET Fabrication and Its Electrical Characteristics.
Li Y, Zhao F, Cheng X, Liu H, Zan Y, Li J, Zhang Q, Wu Z, Luo J, Wang W.
Li Y, et al.
Nanomaterials (Basel). 2021 Jun 28;11(7):1689. doi: 10.3390/nano11071689.
Nanomaterials (Basel). 2021.
PMID: 34203194
Free PMC article.
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