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Effect of P-Type GaN Buried Layer on the Temperature of AlGaN/GaN HEMTs.
Micromachines (Basel). 2023 Jul 20;14(7):1457. doi: 10.3390/mi14071457.
Micromachines (Basel). 2023.
PMID: 37512768
Free PMC article.
Simulation of Single-Event Transient Effect for GaN High-Electron-Mobility Transistor.
Wang Z, Cao Y, Zhang X, Chen C, Wu L, Ma M, Lv H, Lv L, Zheng X, Tian W, Ma X, Hao Y.
Wang Z, et al.
Micromachines (Basel). 2023 Oct 19;14(10):1948. doi: 10.3390/mi14101948.
Micromachines (Basel). 2023.
PMID: 37893385
Free PMC article.
By constructing a two-dimensional structure of GaN HEMT, combined with key models such as carrier mobility, the effects of a different state, different incidence position, different drain voltage, different LET values, and a different incidence angle on the single-event tr …
By constructing a two-dimensional structure of GaN HEMT, combined with key models such as carrier mobility, the effects of a differen …
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