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Year | Number of Results |
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2022 | 1 |
2023 | 4 |
2024 | 0 |
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Page 1
Analysis of Operational Characteristics of AlGaN/GaN High-Electron-Mobility Transistor with Various Slant-Gate-Based Structures: A Simulation Study.
Micromachines (Basel). 2022 Nov 11;13(11):1957. doi: 10.3390/mi13111957.
Micromachines (Basel). 2022.
PMID: 36422387
Free PMC article.
Optimization of Gate-Head-Top/Bottom Lengths of AlGaN/GaN High-Electron-Mobility Transistors with a Gate-Recessed Structure for High-Power Operations: A Simulation Study.
Kang WS, Choi JH, Kim D, Kim JH, Lee JH, Min BG, Kang DM, Choi JH, Kim HS.
Kang WS, et al.
Micromachines (Basel). 2023 Dec 27;15(1):57. doi: 10.3390/mi15010057.
Micromachines (Basel). 2023.
PMID: 38258177
Free PMC article.
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Investigation of the Gate Degradation Induced by Forward Gate Voltage Stress in p-GaN Gate High Electron Mobility Transistors.
Chae M, Kim H.
Chae M, et al.
Micromachines (Basel). 2023 Apr 29;14(5):977. doi: 10.3390/mi14050977.
Micromachines (Basel). 2023.
PMID: 37241601
Free PMC article.
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Enhanced Operational Characteristics Attained by Applying HfO2 as Passivation in AlGaN/GaN High-Electron-Mobility Transistors: A Simulation Study.
Choi JH, Kang WS, Kim D, Kim JH, Lee JH, Kim KY, Min BG, Kang DM, Kim HS.
Choi JH, et al.
Micromachines (Basel). 2023 May 23;14(6):1101. doi: 10.3390/mi14061101.
Micromachines (Basel). 2023.
PMID: 37374686
Free PMC article.
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Improvement of Dynamic On-Resistance in GaN-Based Devices with a High-Quality In Situ SiN Passivation Layer.
Kim JG, Lee JH, Kang DM, Lee JH.
Kim JG, et al.
Micromachines (Basel). 2023 Jun 10;14(6):1227. doi: 10.3390/mi14061227.
Micromachines (Basel). 2023.
PMID: 37374812
Free PMC article.
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