BN-Enabled Epitaxy of Pb(1-x)Sn(x)Se Nanoplates on SiO2/Si for High-Performance Mid-Infrared Detection.
Wang Q, Wen Y, Yao F, Huang Y, Wang Z, Li M, Zhan X, Xu K, Wang F, Wang F, Li J, Liu K, Jiang C, Liu F, He J.
Wang Q, et al.
Small. 2015 Oct 28;11(40):5388-94. doi: 10.1002/smll.201502049. Epub 2015 Aug 25.
Small. 2015.
PMID: 26305343
By designing a few-layer boron nitried (BN) buffer layer, topological crystalline insulator Pb(1-x)Sn(x)Se nanoplates are directly grown on SiO2/Si, which shows high compatibility with current Si-based integrated circuit technology. Back-gated field-effect tr …
By designing a few-layer boron nitried (BN) buffer layer, topological crystalline insulator Pb(1-x)Sn(x)Se nanoplates are directly gr …