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Characteristics of atomic layer deposited Gd2O3 on n-GaN with an AlN layer.
RSC Adv. 2018 Dec 19;8(74):42390-42397. doi: 10.1039/c8ra09708a. eCollection 2018 Dec 19.
RSC Adv. 2018.
PMID: 35558409
Free PMC article.
Thickness Dependence on Interfacial and Electrical Properties in Atomic Layer Deposited AlN on c-plane GaN.
Kim H, Yoon HJ, Choi BJ.
Kim H, et al.
Nanoscale Res Lett. 2018 Aug 10;13(1):232. doi: 10.1186/s11671-018-2645-8.
Nanoscale Res Lett. 2018.
PMID: 30097798
Free PMC article.
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