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2014 | 2 |
2015 | 3 |
2024 | 0 |
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Page 1
Reverse Current Characteristics of InP Gunn Diodes for W-Band Waveguide Applications.
J Nanosci Nanotechnol. 2015 Jul;15(7):5148-50. doi: 10.1166/jnn.2015.10370.
J Nanosci Nanotechnol. 2015.
PMID: 26373094
DC Characteristics of AlGaN/GaN HEMTs Using a Dual-Gate Structure.
Hong S, Rana Au, Heo JW, Kim HS.
Hong S, et al. Among authors: heo jw.
J Nanosci Nanotechnol. 2015 Oct;15(10):7467-71. doi: 10.1166/jnn.2015.11135.
J Nanosci Nanotechnol. 2015.
PMID: 26726352
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Analysis of Hyperabrupt and Uniform Junctions in GaAs for the Application of Varactor Diode.
Heo JW, Hong S, Choi SG, Kim HS.
Heo JW, et al.
J Nanosci Nanotechnol. 2015 Oct;15(10):7457-61. doi: 10.1166/jnn.2015.11140.
J Nanosci Nanotechnol. 2015.
PMID: 26726350
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Impacts of recessed gate and fluoride-based plasma treatment approaches toward normally-off AlGaN/GaN HEMT.
Heo JW, Kim YJ, Kim HS.
Heo JW, et al.
J Nanosci Nanotechnol. 2014 Dec;14(12):9436-42. doi: 10.1166/jnn.2014.10149.
J Nanosci Nanotechnol. 2014.
PMID: 25971079
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Comparison of recessed gate-head structures on normally-off AlGaN/GaN high-electron-mobility transistor performance.
Khan MA, Heo JW, Kim HS, Park HC.
Khan MA, et al. Among authors: heo jw.
J Nanosci Nanotechnol. 2014 Nov;14(11):8141-7. doi: 10.1166/jnn.2014.9897.
J Nanosci Nanotechnol. 2014.
PMID: 25958488
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