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2020 | 1 |
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Growth of High-Quality Hexagonal Boron Nitride Single-Layer Films on Carburized Ni Substrates for Metal-Insulator-Metal Tunneling Devices.
ACS Appl Mater Interfaces. 2020 Aug 5;12(31):35318-35327. doi: 10.1021/acsami.0c07201. Epub 2020 Jul 22.
ACS Appl Mater Interfaces. 2020.
PMID: 32635717
Role of Carbon Interstitials in Transition Metal Substrates on Controllable Synthesis of High-Quality Large-Area Two-Dimensional Hexagonal Boron Nitride Layers.
Tian H, Khanaki A, Das P, Zheng R, Cui Z, He Y, Shi W, Xu Z, Lake R, Liu J.
Tian H, et al. Among authors: cui z.
Nano Lett. 2018 Jun 13;18(6):3352-3361. doi: 10.1021/acs.nanolett.7b05179. Epub 2018 May 11.
Nano Lett. 2018.
PMID: 29727192
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Effect of high carbon incorporation in Co substrates on the epitaxy of hexagonal boron nitride/graphene heterostructures.
Khanaki A, Tian H, Xu Z, Zheng R, He Y, Cui Z, Yang J, Liu J.
Khanaki A, et al. Among authors: cui z.
Nanotechnology. 2018 Jan 19;29(3):035602. doi: 10.1088/1361-6528/aa9c58.
Nanotechnology. 2018.
PMID: 29165320
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