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Year | Number of Results |
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2020 | 1 |
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Page 1
Temperature and Gate-Length Dependence of Subthreshold RF Detection in GaN HEMTs.
Sensors (Basel). 2022 Feb 15;22(4):1515. doi: 10.3390/s22041515.
Sensors (Basel). 2022.
PMID: 35214416
Free PMC article.
Large-Area MoS2 Films Grown on Sapphire and GaN Substrates by Pulsed Laser Deposition.
Španková M, Chromik Š, Dobročka E, Pribusová Slušná L, Talacko M, Gregor M, Pécz B, Koos A, Greco G, Panasci SE, Fiorenza P, Roccaforte F, Cordier Y, Frayssinet E, Giannazzo F.
Španková M, et al. Among authors: cordier y.
Nanomaterials (Basel). 2023 Oct 26;13(21):2837. doi: 10.3390/nano13212837.
Nanomaterials (Basel). 2023.
PMID: 37947682
Free PMC article.
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Electrical activity at the AlN/Si Interface: identifying the main origin of propagation losses in GaN-on-Si devices at microwave frequencies.
Bah M, Valente D, Lesecq M, Defrance N, Garcia Barros M, De Jaeger JC, Frayssinet E, Comyn R, Ngo TH, Alquier D, Cordier Y.
Bah M, et al. Among authors: cordier y.
Sci Rep. 2020 Aug 25;10(1):14166. doi: 10.1038/s41598-020-71064-0.
Sci Rep. 2020.
PMID: 32843709
Free PMC article.
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Trapping Dipolar Exciton Fluids in GaN/(AlGa)N Nanostructures.
Chiaruttini F, Guillet T, Brimont C, Jouault B, Lefebvre P, Vives J, Chenot S, Cordier Y, Damilano B, Vladimirova M.
Chiaruttini F, et al. Among authors: cordier y.
Nano Lett. 2019 Aug 14;19(8):4911-4918. doi: 10.1021/acs.nanolett.9b00914. Epub 2019 Jul 3.
Nano Lett. 2019.
PMID: 31241962
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High Lateral Breakdown Voltage in Thin Channel AlGaN/GaN High Electron Mobility Transistors on AlN/Sapphire Templates.
Abid I, Kabouche R, Bougerol C, Pernot J, Masante C, Comyn R, Cordier Y, Medjdoub F.
Abid I, et al. Among authors: cordier y.
Micromachines (Basel). 2019 Oct 12;10(10):690. doi: 10.3390/mi10100690.
Micromachines (Basel). 2019.
PMID: 31614745
Free PMC article.
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