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Inverse Resistance Change Cr2Ge2Te6-Based PCRAM Enabling Ultralow-Energy Amorphization.
ACS Appl Mater Interfaces. 2018 Jan 24;10(3):2725-2734. doi: 10.1021/acsami.7b16755. Epub 2018 Jan 10.
ACS Appl Mater Interfaces. 2018.
PMID: 29280374
Understanding the Origin of Low-Energy Operation Characteristics for Cr2Ge2Te6 Phase-Change Material: Enhancement of Thermal Efficiency in the High-Scaled Memory Device.
Hatayama S, Yamamoto T, Mori S, Song YH, Sutou Y.
Hatayama S, et al. Among authors: song yh.
ACS Appl Mater Interfaces. 2022 Oct 5;14(39):44604-44613. doi: 10.1021/acsami.2c13189. Epub 2022 Sep 23.
ACS Appl Mater Interfaces. 2022.
PMID: 36149674
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High-Performance Thin-Film Transistors with an Atomic-Layer-Deposited Indium Gallium Oxide Channel: A Cation Combinatorial Approach.
Yang HJ, Seul HJ, Kim MJ, Kim Y, Cho HC, Cho MH, Song YH, Yang H, Jeong JK.
Yang HJ, et al. Among authors: song yh.
ACS Appl Mater Interfaces. 2020 Nov 25;12(47):52937-52951. doi: 10.1021/acsami.0c16325. Epub 2020 Nov 10.
ACS Appl Mater Interfaces. 2020.
PMID: 33172258
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Temperature Dependence According to Grain Boundary Potential Barrier Variation in Vertical NAND Flash Cell with Polycrystalline-Silicon Channel.
Yang HJ, Oh YT, Kim KB, Kweon JY, Lee GH, Choi ES, Park SK, Song YH.
Yang HJ, et al. Among authors: song yh.
J Nanosci Nanotechnol. 2017 Apr;17(4):2628-632. doi: 10.1166/jnn.2017.12765.
J Nanosci Nanotechnol. 2017.
PMID: 29664250
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Degradation Characteristics of MgO Based Magnetic Tunnel Junction Caused by Surface Roughness of Ta/Ru Buffer Layers.
Lee JM, Choi CM, Sukegawa H, Lee JY, Mitani S, Song YH.
Lee JM, et al. Among authors: song yh.
J Nanosci Nanotechnol. 2016 Jan;16(1):654-7. doi: 10.1166/jnn.2016.11901.
J Nanosci Nanotechnol. 2016.
PMID: 27398503
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