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Spin-Valley Locking for In-Gap Quantum Dots in a MoS2 Transistor.
Krishnan R, Biswas S, Hsueh YL, Ma H, Rahman R, Weber B. Krishnan R, et al. Among authors: hsueh yl. Nano Lett. 2023 Jul 12;23(13):6171-6177. doi: 10.1021/acs.nanolett.3c01779. Epub 2023 Jun 26. Nano Lett. 2023. PMID: 37363814
Atomically engineered electron spin lifetimes of 30 s in silicon.
Watson TF, Weber B, Hsueh YL, Hollenberg LLC, Rahman R, Simmons MY. Watson TF, et al. Among authors: hsueh yl. Sci Adv. 2017 Mar 31;3(3):e1602811. doi: 10.1126/sciadv.1602811. eCollection 2017 Mar. Sci Adv. 2017. PMID: 29159289 Free PMC article.