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youngju bae
(5 results)?
Mechanisms of the Device Property Alteration Generated by the Proton Irradiation in GaN-Based MIS-HEMTs Using Extremely Thin Gate Insulator.
Nanomaterials (Basel). 2023 Feb 27;13(5):898. doi: 10.3390/nano13050898.
Nanomaterials (Basel). 2023.
PMID: 36903774
Free PMC article.
Comprehensive Research of Total Ionizing Dose Effects in GaN-Based MIS-HEMTs Using Extremely Thin Gate Dielectric Layer.
Chang SJ, Kim DS, Kim TW, Lee JH, Bae Y, Jung HW, Kang SC, Kim H, Noh YS, Lee SH, Kim SI, Ahn HK, Lim JW.
Chang SJ, et al. Among authors: bae y.
Nanomaterials (Basel). 2020 Oct 30;10(11):2175. doi: 10.3390/nano10112175.
Nanomaterials (Basel). 2020.
PMID: 33143313
Free PMC article.
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