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yongkui zhang
(139 results)?
Investigation on Capacitance Collapse Induced by Secondary Capture of Acceptor Traps in AlGaN/GaN Lateral Schottky Barrier Diode.
Micromachines (Basel). 2022 May 9;13(5):748. doi: 10.3390/mi13050748.
Micromachines (Basel). 2022.
PMID: 35630215
Free PMC article.
Effective Suppression of Amorphous Ga2O and Related Deep Levels on the GaN Surface by High-Temperature Remote Plasma Pretreatments in GaN-Based Metal-Insulator-Semiconductor Electronic Devices.
Deng K, Wang X, Huang S, Li P, Jiang Q, Yin H, Fan J, Wei K, Zheng Y, Shi J, Liu X.
Deng K, et al. Among authors: zheng y.
ACS Appl Mater Interfaces. 2023 May 24;15(20):25058-25065. doi: 10.1021/acsami.3c03094. Epub 2023 May 10.
ACS Appl Mater Interfaces. 2023.
PMID: 37162360
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Investigation on Dynamic Characteristics of AlGaN/GaN Lateral Schottky Barrier Diode.
Zhang H, Kang X, Zheng Y, Wu H, Wei K, Liu X, Ye T, Jin Z.
Zhang H, et al. Among authors: zheng y.
Micromachines (Basel). 2021 Oct 22;12(11):1296. doi: 10.3390/mi12111296.
Micromachines (Basel). 2021.
PMID: 34832708
Free PMC article.
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Partially Crystallized Ultrathin Interfaces between GaN and SiNx Grown by Low-Pressure Chemical Vapor Deposition and Interface Editing.
Wang X, Zhang Y, Huang S, Yin H, Fan J, Wei K, Zheng Y, Wang W, Jiang H, Wu X, Wang X, Liu C, Liu X.
Wang X, et al. Among authors: zheng y.
ACS Appl Mater Interfaces. 2021 Feb 17;13(6):7725-7734. doi: 10.1021/acsami.0c19483. Epub 2021 Feb 2.
ACS Appl Mater Interfaces. 2021.
PMID: 33529524
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Insight into the Near-Conduction Band States at the Crystallized Interface between GaN and SiN x Grown by Low-Pressure Chemical Vapor Deposition.
Liu X, Wang X, Zhang Y, Wei K, Zheng Y, Kang X, Jiang H, Li J, Wang W, Wu X, Wang X, Huang S.
Liu X, et al. Among authors: zheng y.
ACS Appl Mater Interfaces. 2018 Jun 27;10(25):21721-21729. doi: 10.1021/acsami.8b04694. Epub 2018 Jun 12.
ACS Appl Mater Interfaces. 2018.
PMID: 29863840
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Optimization of Mesa Etch for a Quasi-Vertical GaN Schottky Barrier Diode (SBD) by Inductively Coupled Plasma (ICP) and Device Characteristics.
Sun Y, Kang X, Zheng Y, Wei K, Li P, Wang W, Liu X, Zhang G.
Sun Y, et al. Among authors: zheng y.
Nanomaterials (Basel). 2020 Apr 1;10(4):657. doi: 10.3390/nano10040657.
Nanomaterials (Basel). 2020.
PMID: 32244713
Free PMC article.
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