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yi chen tsai
(36 results)?
Comparison of the Physical and Electrical Properties of HfO₂/Al₂O₃/HfO₂/GeOx/Ge and HfO₂/Al₂O₃/GeOx/Ge Gate Stacks.
J Nanosci Nanotechnol. 2019 Aug 1;19(8):4529-4534. doi: 10.1166/jnn.2019.16494.
J Nanosci Nanotechnol. 2019.
PMID: 30913744
Microwave Annealing for NiSiGe Schottky Junction on SiGe P-Channel.
Lin YH, Tsai YH, Hsu CC, Luo GL, Lee YJ, Chien CH.
Lin YH, et al. Among authors: tsai yh.
Materials (Basel). 2015 Nov 10;8(11):7519-7523. doi: 10.3390/ma8115403.
Materials (Basel). 2015.
PMID: 28793654
Free PMC article.
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