High-Output-Power Ultraviolet Light Source from Quasi-2D GaN Quantum Structure

Xin Rong; Xinqiang Wang; Sergey V Ivanov; Xinhe Jiang; Guang Chen; Ping Wang; Weiying Wang; Chenguang He; Tao Wang; Tobias Schulz; Martin Albrecht; Valentin N Jmerik; Alexey A Toropov; Viacheslav V Ratnikov; Vladimir I Kozlovsky; Victor P Martovitsky; Peng Jin; Fujun Xu; Xuelin Yang; Zhixin Qin; Weikun Ge; Junjie Shi; Bo Shen

doi:10.1002/adma.201600990

High-Output-Power Ultraviolet Light Source from Quasi-2D GaN Quantum Structure

Adv Mater. 2016 Sep;28(36):7978-7983. doi: 10.1002/adma.201600990. Epub 2016 Jul 6.

Authors

Xin Rong¹, Xinqiang Wang^{2

3}, Sergey V Ivanov⁴, Xinhe Jiang¹, Guang Chen¹, Ping Wang¹, Weiying Wang¹, Chenguang He¹, Tao Wang¹, Tobias Schulz⁵, Martin Albrecht⁵, Valentin N Jmerik⁴, Alexey A Toropov⁴, Viacheslav V Ratnikov⁴, Vladimir I Kozlovsky^{6

7}, Victor P Martovitsky⁶, Peng Jin⁸, Fujun Xu¹, Xuelin Yang¹, Zhixin Qin¹, Weikun Ge¹, Junjie Shi¹, Bo Shen^{9

10}

Affiliations

¹ State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, 100871, P. R. China.
² State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, 100871, P. R. China. wangshi@pku.edu.cn.
³ Collaborative Innovation Center of Quantum Matter, Beijing, 100871, P. R. China. wangshi@pku.edu.cn.
⁴ Ioffe Institute, Polytekhnicheskaya 26, St. Petersburg, 194021, Russia.
⁵ Leibniz Institute for Crystal Growth, Berlin, 12489, Germany.
⁶ Lebedev Physical Institute, Russian Academy of Sciences, Leninsky pr. 53, Moscow, 119991, Russia.
⁷ National Research Nuclear University MEPhI, Kashirskoye shosse 31, Moscow, 115409, Russia.
⁸ Key Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low-dimensional Semiconductor Materials and Devices, Institute of Semiconductors, CAS, Beijing, 100083, P. R. China.
⁹ State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, 100871, P. R. China. bshen@pku.edu.cn.
¹⁰ Collaborative Innovation Center of Quantum Matter, Beijing, 100871, P. R. China. bshen@pku.edu.cn.

PMID: 27383739
DOI: 10.1002/adma.201600990

Abstract

Quasi-2D GaN layers inserted in an AlGaN matrix are proposed as a novel active region to develop a high-output-power UV light source. Such a structure is successfully achieved by precise control in molecular beam epitaxy and shows an amazing output power of ≈160 mW at 285 nm with a pulsed electron-beam excitation. This device is promising and competitive in non-line-of-sight communications or the sterilization field.

Keywords: e-beam pumping; high output power; mid-UV light sources; molecular beam epitaxy; quasi-2D GaN.