Quantified density of performance-degrading near-interface traps in SiC MOSFETs

Mayank Chaturvedi; Sima Dimitrijev; Daniel Haasmann; Hamid Amini Moghadam; Peyush Pande; Utkarsh Jadli

doi:10.1038/s41598-022-08014-5

Quantified density of performance-degrading near-interface traps in SiC MOSFETs

Sci Rep. 2022 Mar 8;12(1):4076. doi: 10.1038/s41598-022-08014-5.

Authors

Mayank Chaturvedi^{1

2}, Sima Dimitrijev^{3

4}, Daniel Haasmann^{3

4}, Hamid Amini Moghadam^{3

4}, Peyush Pande⁵, Utkarsh Jadli^{3

4}

Affiliations

¹ Queensland Micro- and Nanotechnology Centre, Griffith University, Brisbane, QLD, 4111, Australia. mayank.chaturvedi@griffithuni.edu.au.
² School of Engineering and Built Environment, Griffith University, Brisbane, QLD, 4111, Australia. mayank.chaturvedi@griffithuni.edu.au.
³ Queensland Micro- and Nanotechnology Centre, Griffith University, Brisbane, QLD, 4111, Australia.
⁴ School of Engineering and Built Environment, Griffith University, Brisbane, QLD, 4111, Australia.
⁵ Department of Electronics and Communication Engineering, Graphic Era (Deemed to be University), Dehradun, Uttarakhand, 248002, India.

Abstract

Characterization of near-interface traps (NITs) in commercial SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) is essential because they adversely impact both performance and reliability by reducing the channel carrier mobility and causing threshold-voltage drift. In this work, we have applied a newly developed integrated-charge technique to measure the density of NITs that are active in the above-threshold region of commercial SiC MOSFETs. The results demonstrate that NITs trap about 10% of the channel electrons for longer than 500 ns.

MeSH terms

Oxides
Reproducibility of Results
Semiconductors*
Transistors, Electronic*

Substances

Oxides