Tsung-Ming Tsai - Search Results

Year	Number of Results
2010	1
2013	3
2014	3
2015	1
2016	4
2017	3
2019	1
2020	1
2022	3
2024	0

1

Analysis of Meridian Flow Direction by Electrical Stimulation Method.

Liu YW, Kuo CW, Chang TC, Hung YC, Tan YF, Wu CC, Lin CH, Chen WC, Hu WL, Tsai TM. Liu YW, et al. Among authors: tsai tm. Nanoscale Res Lett. 2022 Jul 8;17(1):64. doi: 10.1186/s11671-022-03694-4. Nanoscale Res Lett. 2022. PMID: 35802273 Free PMC article.

2

Meridian study on the response current affected by acupuncture needling direction.

Lin CH, Tan YF, Tseng ST, Chen WC, Kuo CW, Wu CC, Tsai TM, Hu WL, Chang TC, Hung YC. Lin CH, et al. Among authors: tsai tm. Medicine (Baltimore). 2022 Sep 2;101(35):e30338. doi: 10.1097/MD.0000000000030338. Medicine (Baltimore). 2022. PMID: 36107585 Free PMC article.

3

Meridian study on the response current affected by electrical pulse and acupuncture.

Hung YC, Chen WC, Chang TC, Zheng HX, Liu YW, Tan YF, Lin SK, Lu YH, Hu WL, Tsai TM. Hung YC, et al. Among authors: tsai tm. Nanoscale Res Lett. 2020 Jul 10;15(1):146. doi: 10.1186/s11671-020-03373-2. Nanoscale Res Lett. 2020. PMID: 32651748 Free PMC article.

4

Sebaceous carcinoma associated with seborrheic keratosis.

Tsai TM, Wu YH, Yang KC, Yang CY, Tsai TH, Chan JY. Tsai TM, et al. J Cutan Med Surg. 2010 Sep-Oct;14(5):240-4. doi: 10.2310/7750.2010.09059. J Cutan Med Surg. 2010. PMID: 20868621

5

Improved diffusion and storage of lithium ions via recrystallization induced conducting pathways in a Li:Ta₂O₅-based electrolyte for all-solid-state electrochromic devices with enhanced performance.

Lin CC, Chen PH, Chen MC, Wang MC, Yang CC, Huang HC, Wu CW, Chou SY, Tsai TM, Chang TC. Lin CC, et al. Among authors: tsai tm. Nanotechnology. 2022 Apr 20;33(27). doi: 10.1088/1361-6528/ac5ca8. Nanotechnology. 2022. PMID: 35272278

6

Physical and chemical mechanisms in oxide-based resistance random access memory.

Chang KC, Chang TC, Tsai TM, Zhang R, Hung YC, Syu YE, Chang YF, Chen MC, Chu TJ, Chen HL, Pan CH, Shih CC, Zheng JC, Sze SM. Chang KC, et al. Among authors: tsai tm. Nanoscale Res Lett. 2015 Mar 12;10:120. doi: 10.1186/s11671-015-0740-7. eCollection 2015. Nanoscale Res Lett. 2015. PMID: 25873842 Free PMC article.

7

Hydrogen induced redox mechanism in amorphous carbon resistive random access memory.

Chen YJ, Chen HL, Young TF, Chang TC, Tsai TM, Chang KC, Zhang R, Chen KH, Lou JC, Chu TJ, Chen JH, Bao DH, Sze SM. Chen YJ, et al. Among authors: tsai tm. Nanoscale Res Lett. 2014 Jan 29;9(1):52. doi: 10.1186/1556-276X-9-52. Nanoscale Res Lett. 2014. PMID: 24475979 Free PMC article.

8

Integrated one diode-one resistor architecture in nanopillar SiOx resistive switching memory by nanosphere lithography.

Ji L, Chang YF, Fowler B, Chen YC, Tsai TM, Chang KC, Chen MC, Chang TC, Sze SM, Yu ET, Lee JC. Ji L, et al. Among authors: tsai tm. Nano Lett. 2014 Feb 12;14(2):813-8. doi: 10.1021/nl404160u. Epub 2013 Dec 30. Nano Lett. 2014. PMID: 24369783

9

Rational Hydrogenation for Enhanced Mobility and High Reliability on ZnO-based Thin Film Transistors: From Simulation to Experiment.

Xu L, Chen Q, Liao L, Liu X, Chang TC, Chang KC, Tsai TM, Jiang C, Wang J, Li J. Xu L, et al. Among authors: tsai tm. ACS Appl Mater Interfaces. 2016 Mar 2;8(8):5408-15. doi: 10.1021/acsami.5b10220. Epub 2016 Feb 17. ACS Appl Mater Interfaces. 2016. PMID: 26856932

10

Resistance Switching Characteristics Induced by O₂ Plasma Treatment of an Indium Tin Oxide Film for Use as an Insulator in Resistive Random Access Memory.

Chen PH, Chang TC, Chang KC, Tsai TM, Pan CH, Chen MC, Su YT, Lin CY, Tseng YT, Huang HC, Wu H, Deng N, Qian H, Sze SM. Chen PH, et al. Among authors: tsai tm. ACS Appl Mater Interfaces. 2017 Jan 25;9(3):3149-3155. doi: 10.1021/acsami.6b14282. Epub 2017 Jan 10. ACS Appl Mater Interfaces. 2017. PMID: 28072511

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