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A Stacked Back Side-Illuminated Voltage Domain Global Shutter CMOS Image Sensor with a 4.0 μm Multiple Gain Readout Pixel †.
Sensors (Basel). 2020 Jan 15;20(2):486. doi: 10.3390/s20020486.
Sensors (Basel). 2020.
PMID: 31952205
Free PMC article.
An Over 90 dB Intra-Scene Single-Exposure Dynamic Range CMOS Image Sensor Using a 3.0 μm Triple-Gain Pixel Fabricated in a Standard BSI Process.
Takayanagi I, Yoshimura N, Mori K, Matsuo S, Tanaka S, Abe H, Yasuda N, Ishikawa K, Okura S, Ohsawa S, Otaka T.
Takayanagi I, et al. Among authors: otaka t.
Sensors (Basel). 2018 Jan 12;18(1):203. doi: 10.3390/s18010203.
Sensors (Basel). 2018.
PMID: 29329210
Free PMC article.
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