Obtaining silicon-based photonic-structures in the ultraviolet range would expand the wavelength bandwidth of silicon technology, where it is normally forbidden. Herein, we fabricated porous silicon microcavities by electrochemical etching of alternating high and low refraction index layers; and were carefully subjected to two stages of dry oxidation at 350 °C for 30 minutes and 900 °C, with different oxidation times. In this way, we obtained oxidized porous silicon that induces a shift of a localized mode in the ultraviolet region. The presence of Si-O-Si bonds was made clear by FTIR absorbance spectra. High-quality oxidized microcavities were shown by SEM, where their mechanical stability was clearly visible. We used an effective medium model to predict the refractive index and optical properties of the microcavities. The model can use either two or three components (Si, SiO2, and air). The latter predicts that the microcavities are made almost completely of SiO2, implying less photon losses in the structure. The theoretical photonic-bandgap structure and localized photonic mode location showed that the experimental spectral peaks within the UV photonic bandgap are indeed localized modes. These results support that our oxidation process is very advantageous to obtain complex photonic structures in the UV region.