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3.5 × 3.5 μm2 GaN blue micro-light-emitting diodes with negligible sidewall surface nonradiative recombination.
Nat Commun. 2023 Nov 21;14(1):7569. doi: 10.1038/s41467-023-43472-z.
Nat Commun. 2023.
PMID: 37989746
Free PMC article.
Fabrication and Evaluation of N-Channel GaN Metal-Oxide-Semiconductor Field-Effect Transistors Based on Regrown and Implantation Methods.
Nguyen HT, Yamada H, Yamada T, Takahashi T, Shimizu M.
Nguyen HT, et al. Among authors: takahashi t.
Materials (Basel). 2020 Feb 18;13(4):899. doi: 10.3390/ma13040899.
Materials (Basel). 2020.
PMID: 32085428
Free PMC article.
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Enhancement of the evanescent wave coupling effect in a sub-wavelength-sized GaAs/AlGaAs ridge structure by low-refractive-index surface layers.
Wang XL, Hao GD, Takahashi T.
Wang XL, et al. Among authors: takahashi t.
Opt Express. 2014 Oct 20;22 Suppl 6:A1559-66. doi: 10.1364/OE.22.0A1559.
Opt Express. 2014.
PMID: 25607313
Free article.
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