Thomas Kämpfe - Search Results

Year	Number of Results
2007	2
2008	2
2010	2
2011	2
2012	3
2015	1
2016	1
2017	4
2018	1
2019	2
2020	2
2021	2
2022	4
2023	4
2024	1

1

First demonstration of in-memory computing crossbar using multi-level Cell FeFET.

Soliman T, Chatterjee S, Laleni N, Müller F, Kirchner T, Wehn N, Kämpfe T, Chauhan YS, Amrouch H. Soliman T, et al. Among authors: kampfe t. Nat Commun. 2023 Oct 10;14(1):6348. doi: 10.1038/s41467-023-42110-y. Nat Commun. 2023. PMID: 37816751 Free PMC article.

2

Embedding security into ferroelectric FET array via in situ memory operation.

Xu Y, Xiao Y, Zhao Z, Müller F, Vardar A, Gong X, George S, Kämpfe T, Narayanan V, Ni K. Xu Y, et al. Among authors: kampfe t. Nat Commun. 2023 Dec 13;14(1):8287. doi: 10.1038/s41467-023-43941-5. Nat Commun. 2023. PMID: 38092753 Free PMC article.

3

Achieving software-equivalent accuracy for hyperdimensional computing with ferroelectric-based in-memory computing.

Kazemi A, Müller F, Sharifi MM, Errahmouni H, Gerlach G, Kämpfe T, Imani M, Hu XS, Niemier M. Kazemi A, et al. Among authors: kampfe t. Sci Rep. 2022 Nov 10;12(1):19201. doi: 10.1038/s41598-022-23116-w. Sci Rep. 2022. PMID: 36357468 Free PMC article.

4

Electric field-induced crystallization of ferroelectric hafnium zirconium oxide.

Lederer M, Abdulazhanov S, Olivo R, Lehninger D, Kämpfe T, Seidel K, Eng LM. Lederer M, et al. Among authors: kampfe t. Sci Rep. 2021 Nov 15;11(1):22266. doi: 10.1038/s41598-021-01724-2. Sci Rep. 2021. PMID: 34782687 Free PMC article.

5

THz Thin Film Varactor Based on Integrated Ferroelectric HfZrO₂.

Abdulazhanov S, Le QH, Huynh DK, Wang D, Lehninger D, Kämpfe T, Gerlach G. Abdulazhanov S, et al. Among authors: kampfe t. ACS Appl Electron Mater. 2022 Dec 23;5(1):189-195. doi: 10.1021/acsaelm.2c01273. eCollection 2023 Jan 24. ACS Appl Electron Mater. 2022. PMID: 36711042 Free PMC article.

6

Ferroelectric compute-in-memory annealer for combinatorial optimization problems.

Yin X, Qian Y, Vardar A, Günther M, Müller F, Laleni N, Zhao Z, Jiang Z, Shi Z, Shi Y, Gong X, Zhuo C, Kämpfe T, Ni K. Yin X, et al. Among authors: kampfe t. Nat Commun. 2024 Mar 18;15(1):2419. doi: 10.1038/s41467-024-46640-x. Nat Commun. 2024. PMID: 38499524 Free PMC article.

7

Synergistic Approach of Interfacial Layer Engineering and READ-Voltage Optimization in HfO₂-Based FeFETs for In-Memory-Computing Applications.

Raffel Y, De S, Lederer M, Olivo RR, Hoffmann R, Thunder S, Pirro L, Beyer S, Chohan T, Kämpfe T, Seidel K, Heitmann J. Raffel Y, et al. Among authors: kampfe t. ACS Appl Electron Mater. 2022 Nov 22;4(11):5292-5300. doi: 10.1021/acsaelm.2c00771. Epub 2022 Oct 27. ACS Appl Electron Mater. 2022. PMID: 36439397 Free PMC article.

8

Ferroelectric Content-Addressable Memory Cells with IGZO Channel: Impact of Retention Degradation on the Multibit Operation.

Sk MR, Thunder S, Lehninger D, Sanctis S, Raffel Y, Lederer M, Jank MPM, Kämpfe T, De S, Chakrabarti B. Sk MR, et al. Among authors: kampfe t. ACS Appl Electron Mater. 2023 Jan 4;5(2):812-820. doi: 10.1021/acsaelm.2c01357. eCollection 2023 Feb 28. ACS Appl Electron Mater. 2023. PMID: 36873263 Free PMC article.

9

Structural and Electrical Response of Emerging Memories Exposed to Heavy Ion Radiation.

Vogel T, Zintler A, Kaiser N, Guillaume N, Lefèvre G, Lederer M, Serra AL, Piros E, Kim T, Schreyer P, Winkler R, Nasiou D, Olivo RR, Ali T, Lehninger D, Arzumanov A, Charpin-Nicolle C, Bourgeois G, Grenouillet L, Cyrille MC, Navarro G, Seidel K, Kämpfe T, Petzold S, Trautmann C, Molina-Luna L, Alff L. Vogel T, et al. Among authors: kampfe t. ACS Nano. 2022 Sep 27;16(9):14463-14478. doi: 10.1021/acsnano.2c04841. Epub 2022 Sep 16. ACS Nano. 2022. PMID: 36113861 Free PMC article.

10

Direct S-matrix calculation for diffractive structures and metasurfaces.

Shcherbakov AA, Stebunov YV, Baidin DF, Kämpfe T, Jourlin Y. Shcherbakov AA, et al. Among authors: kampfe t. Phys Rev E. 2018 Jun;97(6-1):063301. doi: 10.1103/PhysRevE.97.063301. Phys Rev E. 2018. PMID: 30011426

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