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Layer-resolved release of epitaxial layers in III-V heterostructure via a buffer-free mechanical separation technique.
Sci Adv. 2022 Jan 21;8(3):eabl6406. doi: 10.1126/sciadv.abl6406. Epub 2022 Jan 21.
Sci Adv. 2022.
PMID: 35061536
Free PMC article.
Thermal Behavior of an AlGaN/GaN-Based Schottky Barrier Diode on Diamond and Silicon Substrates.
Kim ZS, Lee HS, Bae SB, Ahn H, Lee SH, Lim JW, Kang DM.
Kim ZS, et al. Among authors: bae sb.
J Nanosci Nanotechnol. 2021 Aug 1;21(8):4429-4433. doi: 10.1166/jnn.2021.19421.
J Nanosci Nanotechnol. 2021.
PMID: 33714339
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Thermal Properties of Schottky Barrier Diode on AlGaN/GaN Heterostructures on Chemical Vapor Deposition Diamond.
Kim ZS, Lee HS, Bae SB, Nam E, Lim JW.
Kim ZS, et al. Among authors: bae sb.
J Nanosci Nanotechnol. 2019 Oct 1;19(10):6119-6122. doi: 10.1166/jnn.2019.16987.
J Nanosci Nanotechnol. 2019.
PMID: 31026919
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Effects of Recess Depth Under the Gate Area on the Vth-Shift for Fabricating Normally-Off Field Effect Transistors on AlGaN/GaN Heterostructures.
Kim ZS, Lee HS, Bae SB, Nam ES, Lim JW.
Kim ZS, et al. Among authors: bae sb.
J Nanosci Nanotechnol. 2020 Jul 1;20(7):4170-4175. doi: 10.1166/jnn.2020.17783.
J Nanosci Nanotechnol. 2020.
PMID: 31968436
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