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Page 1
Analysis of the Sensing Margin of Silicon and Poly-Si 1T-DRAM.
Micromachines (Basel). 2020 Feb 23;11(2):228. doi: 10.3390/mi11020228.
Micromachines (Basel). 2020.
PMID: 32102235
Free PMC article.
Analysis of Grain Boundary Dependent Memory Characteristics in Poly-Si One-Transistor Dynamic Random-Access Memory.
Yoo S, Kang IM, Cho SJ, Sun W, Shin H.
Yoo S, et al.
J Nanosci Nanotechnol. 2021 Aug 1;21(8):4216-4222. doi: 10.1166/jnn.2021.19389.
J Nanosci Nanotechnol. 2021.
PMID: 33714306
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Analysis of a Lateral Grain Boundary for Reducing Performance Variations in Poly-Si 1T-DRAM.
Yoo S, Sun W, Shin H.
Yoo S, et al.
Micromachines (Basel). 2020 Oct 22;11(11):952. doi: 10.3390/mi11110952.
Micromachines (Basel). 2020.
PMID: 33105643
Free PMC article.
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