InAs/InAsSb Type-II Strained-Layer Superlattice Infrared Photodetectors

Micromachines (Basel). 2020 Oct 26;11(11):958. doi: 10.3390/mi11110958.

Abstract

The InAs/InAsSb (Gallium-free) type-II strained-layer superlattice (T2SLS) has emerged in the last decade as a viable infrared detector material with a continuously adjustable band gap capable of accommodating detector cutoff wavelengths ranging from 4 to 15 µm and beyond. When coupled with the unipolar barrier infrared detector architecture, the InAs/InAsSb T2SLS mid-wavelength infrared (MWIR) focal plane array (FPA) has demonstrated a significantly higher operating temperature than InSb FPA, a major incumbent technology. In this brief review paper, we describe the emergence of the InAs/InAsSb T2SLS infrared photodetector technology, point out its advantages and disadvantages, and survey its recent development.

Keywords: InAs/InAsSb; infrared detector; mid-wavelength infrared (MWIR); type-II superlattice; unipolar barrier.

Publication types

  • Review