F-Shaped Tunnel Field-Effect Transistor (TFET) for the Low-Power Application

Seunghyun Yun; Jeongmin Oh; Seokjung Kang; Yoon Kim; Jang Hyun Kim; Garam Kim; Sangwan Kim

doi:10.3390/mi10110760

F-Shaped Tunnel Field-Effect Transistor (TFET) for the Low-Power Application

Micromachines (Basel). 2019 Nov 9;10(11):760. doi: 10.3390/mi10110760.

Authors

Seunghyun Yun¹, Jeongmin Oh¹, Seokjung Kang¹, Yoon Kim², Jang Hyun Kim³, Garam Kim⁴, Sangwan Kim¹

Affiliations

¹ Department of Electrical and Computer Engineering, Ajou University, Suwon 16499, Korea.
² School of Electrical and Computer Engineering, University of Seoul, Seoul 02504, Korea.
³ Inter-university Semiconductor Research Center, Department of Electrical and with the Department of Computer Engineering, Seoul National University, Seoul 08826, Korea.
⁴ Department of Electronic Engineering, Myongji University, Yongin 17058, Korea.

Abstract

In this report, a novel tunnel field-effect transistor (TFET) named 'F-shaped TFET' has been proposed and its electrical characteristics are analyzed and optimized by using a computer-aided design simulation. It features ultra-thin and a highly doped source surrounded by lightly doped regions. As a result, it is compared to an L-shaped TFET, which is a motivation of this work, the F-shaped TFET can lower turn-on voltage (V_ON) maintaining high on-state current (I_ON) and low subthreshold swing (SS) with the help of electric field crowding effects. The optimized F-shaped TFET shows 0.4 V lower V_ON than the L-shaped TFET with the same design parameter. In addition, it shows 4.8 times higher I_ON and 7 mV/dec smaller average SS with the same V_ON as that for L-shaped TFET.

Keywords: L-shaped TFET; band-to-band tunneling; corner effect; electric field crowding; line tunneling; tunnel field-effect transistor (TFET).