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2018 2
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Page 1
Atomistic Insights into Ultrafast SiGe Nanoprocessing.
Calogero G, Raciti D, Ricciarelli D, Acosta-Alba P, Cristiano F, Daubriac R, Demoulin R, Deretzis I, Fisicaro G, Hartmann JM, Kerdilès S, La Magna A. Calogero G, et al. Among authors: kerdiles s. J Phys Chem C Nanomater Interfaces. 2023 Sep 27;127(39):19867-19877. doi: 10.1021/acs.jpcc.3c05999. eCollection 2023 Oct 5. J Phys Chem C Nanomater Interfaces. 2023. PMID: 37817920 Free PMC article.
Low loss poly-silicon for high performance capacitive silicon modulators.
Douix M, Baudot C, Marris-Morini D, Valéry A, Fowler D, Acosta-Alba P, Kerdilès S, Euvrard C, Blanc R, Beneyton R, Souhaité A, Crémer S, Vulliet N, Vivien L, Boeuf F. Douix M, et al. Among authors: kerdiles s. Opt Express. 2018 Mar 5;26(5):5983-5990. doi: 10.1364/OE.26.005983. Opt Express. 2018. PMID: 29529794 Free article.
SiGe-enhanced Si capacitive modulator integration in a 300 mm silicon photonics platform for low power consumption.
Douix M, Perez-Galacho D, Charlet I, Baudot C, Acosta-Alba P, Kerdilès S, Euvrard C, Grosse P, Planchot J, Blanc R, Beneyton R, Gourhant O, Crémer S, Souhaité A, Vulliet N, Vivien L, Marris-Morini D, Boeuf F. Douix M, et al. Among authors: kerdiles s. Opt Express. 2019 Jun 24;27(13):17701-17707. doi: 10.1364/OE.27.017701. Opt Express. 2019. PMID: 31252726 Free article.
A differential Hall effect measurement method with sub-nanometre resolution for active dopant concentration profiling in ultrathin doped Si1-x Ge x and Si layers.
Daubriac R, Scheid E, Rizk H, Monflier R, Joblot S, Beneyton R, Acosta Alba P, Kerdilès S, Cristiano F. Daubriac R, et al. Among authors: kerdiles s. Beilstein J Nanotechnol. 2018 Jul 5;9:1926-1939. doi: 10.3762/bjnano.9.184. eCollection 2018. Beilstein J Nanotechnol. 2018. PMID: 30013886 Free PMC article.