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Electrical activity at the AlN/Si Interface: identifying the main origin of propagation losses in GaN-on-Si devices at microwave frequencies.
Sci Rep. 2020 Aug 25;10(1):14166. doi: 10.1038/s41598-020-71064-0.
Sci Rep. 2020.
PMID: 32843709
Free PMC article.
High Lateral Breakdown Voltage in Thin Channel AlGaN/GaN High Electron Mobility Transistors on AlN/Sapphire Templates.
Abid I, Kabouche R, Bougerol C, Pernot J, Masante C, Comyn R, Cordier Y, Medjdoub F.
Abid I, et al. Among authors: comyn r.
Micromachines (Basel). 2019 Oct 12;10(10):690. doi: 10.3390/mi10100690.
Micromachines (Basel). 2019.
PMID: 31614745
Free PMC article.
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