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Page 1
Crystalline Quality and Surface Morphology Improvement of Face-to-Face Annealed MBE-Grown AlN on h-BN.
Materials (Basel). 2022 Dec 2;15(23):8602. doi: 10.3390/ma15238602.
Materials (Basel). 2022.
PMID: 36500097
Free PMC article.
Correlative investigation of Mg doping in GaN layers grown at different temperatures by atom probe tomography and off-axis electron holography.
Amichi L, Mouton I, Boureau V, Di Russo E, Vennéguès P, De Mierry P, Grenier A, Jouneau PH, Bougerol C, Cooper D.
Amichi L, et al. Among authors: vennegues p.
Nanotechnology. 2020 Jan 17;31(4):045702. doi: 10.1088/1361-6528/ab4a46. Epub 2019 Oct 2.
Nanotechnology. 2020.
PMID: 31577995
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Demonstration of Electrically Injected Semipolar Laser Diodes Grown on Low-Cost and Scalable Sapphire Substrates.
Khoury M, Li H, Zhang H, Bonef B, Wong MS, Wu F, Cohen D, De Mierry P, Vennéguès P, Speck JS, Nakamura S, DenBaars SP.
Khoury M, et al. Among authors: vennegues p.
ACS Appl Mater Interfaces. 2019 Dec 18;11(50):47106-47111. doi: 10.1021/acsami.9b17525. Epub 2019 Dec 6.
ACS Appl Mater Interfaces. 2019.
PMID: 31769651
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Strain- and surface-induced modification of photoluminescence from self-assembled GaN/Al0.5Ga0.5N quantum dots: strong effect of capping layer and atmospheric condition.
Kim JH, Elmaghraoui D, Leroux M, Korytov M, Vennéguès P, Jaziri S, Brault J, Cho YH.
Kim JH, et al. Among authors: vennegues p.
Nanotechnology. 2014 Aug 1;25(30):305703. doi: 10.1088/0957-4484/25/30/305703. Epub 2014 Jul 10.
Nanotechnology. 2014.
PMID: 25008561
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