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Polarization Doping in a GaN-InN System-Ab Initio Simulation.
Ahmad A, Strak P, Kempisty P, Sakowski K, Piechota J, Kangawa Y, Grzegory I, Leszczynski M, Zytkiewicz ZR, Muziol G, Monroy E, Kaminska A, Krukowski S. Ahmad A, et al. Among authors: kempisty p. Materials (Basel). 2023 Jan 31;16(3):1227. doi: 10.3390/ma16031227. Materials (Basel). 2023. PMID: 36770233 Free PMC article.
Role of Metallic Adlayer in Limiting Ge Incorporation into GaN.
Turski H, Wolny P, Chlipala M, Sawicka M, Reszka A, Kempisty P, Konczewicz L, Muziol G, Siekacz M, Skierbiszewski C. Turski H, et al. Among authors: kempisty p. Materials (Basel). 2022 Aug 27;15(17):5929. doi: 10.3390/ma15175929. Materials (Basel). 2022. PMID: 36079311 Free PMC article.