Investigations on the Role of N₂:(N₂ + CH₄) Ratio on the Growth of Hydrophobic Nanostructured Hydrogenated Carbon Nitride Thin Films by Plasma Enhanced Chemical Vapor Deposition at Low Temperature

Nanostructured hydrogenated carbon nitride (CN_x:H) thin films were synthesized on a crystal silicon substrate at low deposition temperature by radio-frequency plasma-enhanced chemical vapor deposition (PECVD). Methane and nitrogen were the precursor gases used in this deposition process. The effects of N₂ to the total gas flow rate ratio on the formation of CN_x:H nanostructures were investigated. Field-emission scanning electron microscopy (FESEM), Auger electron spectroscopy (AES), Raman scattering, and Fourier transform of infrared spectroscopies (FTIR) were used to characterize the films. The atomic nitrogen to carbon ratio and sp² bonds in the film structure showed a strong influence on its growth rate, and its overall structure is strongly influenced by even small changes in the N₂:(N₂ + CH₄) ratio. The formation of fibrous CN_x:H nanorod structures occurs at ratios of 0.7 and 0.75, which also shows improved surface hydrophobic characteristic. Analysis showed that significant presence of isonitrile bonds in a more ordered film structure were important criteria contributing to the formation of vertically-aligned nanorods. The hydrophobicity of the CN_x:H surface improved with the enhancement in the vertical alignment and uniformity in the distribution of the fibrous nanorod structures.