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Page 1
An Aqueous Route to Oxygen-Deficient Wake-Up-Free La-Doped HfO2 Ferroelectrics for Negative Capacitance Field Effect Transistors.
ACS Nano. 2023 Oct 10;17(19):19076-19086. doi: 10.1021/acsnano.3c04983. Epub 2023 Sep 29.
ACS Nano. 2023.
PMID: 37772990
Temperature-Independent Current Dispersion in 0.15 μm AlGaN/GaN HEMTs for 5G Applications.
Zagni N, Verzellesi G, Chini A.
Zagni N, et al.
Micromachines (Basel). 2022 Dec 17;13(12):2244. doi: 10.3390/mi13122244.
Micromachines (Basel). 2022.
PMID: 36557543
Free PMC article.
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Highly sensitive active pixel image sensor array driven by large-area bilayer MoS2 transistor circuitry.
Hong S, Zagni N, Choo S, Liu N, Baek S, Bala A, Yoo H, Kang BH, Kim HJ, Yun HJ, Alam MA, Kim S.
Hong S, et al. Among authors: zagni n.
Nat Commun. 2021 Jun 11;12(1):3559. doi: 10.1038/s41467-021-23711-x.
Nat Commun. 2021.
PMID: 34117235
Free PMC article.
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On the Modeling of the Donor/Acceptor Compensation Ratio in Carbon-Doped GaN to Univocally Reproduce Breakdown Voltage and Current Collapse in Lateral GaN Power HEMTs.
Zagni N, Chini A, Puglisi FM, Pavan P, Verzellesi G.
Zagni N, et al.
Micromachines (Basel). 2021 Jun 16;12(6):709. doi: 10.3390/mi12060709.
Micromachines (Basel). 2021.
PMID: 34208780
Free PMC article.
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