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Excellent resistive memory characteristics and switching mechanism using a Ti nanolayer at the Cu/TaOx interface.
Nanoscale Res Lett. 2012 Jun 26;7(1):345. doi: 10.1186/1556-276X-7-345.
Nanoscale Res Lett. 2012.
PMID: 22734564
Free PMC article.
Formation polarity dependent improved resistive switching memory characteristics using nanoscale (1.3 nm) core-shell IrOx nano-dots.
Banerjee W, Maikap S, Lai CS, Chen YY, Tien TC, Lee HY, Chen WS, Chen FT, Kao MJ, Tsai MJ, Yang JR.
Banerjee W, et al. Among authors: kao mj.
Nanoscale Res Lett. 2012 Mar 22;7(1):194. doi: 10.1186/1556-276X-7-194.
Nanoscale Res Lett. 2012.
PMID: 22439604
Free PMC article.
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