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Year | Number of Results |
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2020 | 1 |
2021 | 2 |
2022 | 2 |
2023 | 2 |
2024 | 0 |
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Page 1
Nitride light-emitting diodes for cryogenic temperatures.
Opt Express. 2020 Sep 28;28(20):30299-30308. doi: 10.1364/OE.403906.
Opt Express. 2020.
PMID: 33114912
Free article.
Bidirectional light-emitting diode as a visible light source driven by alternating current.
Żak M, Muziol G, Siekacz M, Bercha A, Hajdel M, Nowakowski-Szkudlarek K, Lachowski A, Chlipała M, Wolny P, Turski H, Skierbiszewski C.
Żak M, et al. Among authors: chlipala m.
Nat Commun. 2023 Nov 20;14(1):7562. doi: 10.1038/s41467-023-43335-7.
Nat Commun. 2023.
PMID: 37985775
Free PMC article.
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Negative Magnetoresistivity in Highly Doped n-Type GaN.
Konczewicz L, Iwinska M, Litwin-Staszewska E, Zajac M, Turski H, Bockowski M, Schiavon D, Chlipała M, Juillaguet S, Contreras S.
Konczewicz L, et al. Among authors: chlipala m.
Materials (Basel). 2022 Oct 11;15(20):7069. doi: 10.3390/ma15207069.
Materials (Basel). 2022.
PMID: 36295135
Free PMC article.
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The influence of Fermi level position at the GaN surface on carrier transfer across the MAPbI3/GaN interface.
Zdanowicz E, Herman AP, Przypis Ł, Opołczyńska K, Serafińczuk J, Chlipała M, Skierbiszewski C, Kudrawiec R.
Zdanowicz E, et al. Among authors: chlipala m.
Phys Chem Chem Phys. 2023 Jun 21;25(24):16492-16498. doi: 10.1039/d3cp00801k.
Phys Chem Chem Phys. 2023.
PMID: 37306624
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Role of Metallic Adlayer in Limiting Ge Incorporation into GaN.
Turski H, Wolny P, Chlipala M, Sawicka M, Reszka A, Kempisty P, Konczewicz L, Muziol G, Siekacz M, Skierbiszewski C.
Turski H, et al. Among authors: chlipala m.
Materials (Basel). 2022 Aug 27;15(17):5929. doi: 10.3390/ma15175929.
Materials (Basel). 2022.
PMID: 36079311
Free PMC article.
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Dependence of InGaN Quantum Well Thickness on the Nature of Optical Transitions in LEDs.
Hajdel M, Chlipała M, Siekacz M, Turski H, Wolny P, Nowakowski-Szkudlarek K, Feduniewicz-Żmuda A, Skierbiszewski C, Muziol G.
Hajdel M, et al. Among authors: chlipala m.
Materials (Basel). 2021 Dec 29;15(1):237. doi: 10.3390/ma15010237.
Materials (Basel). 2021.
PMID: 35009382
Free PMC article.
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Lateral carrier injection for the uniform pumping of several quantum wells in InGaN/GaN light-emitting diodes.
Schiavon D, Chlipala M, Perlin P.
Schiavon D, et al. Among authors: chlipala m.
Opt Express. 2021 Feb 1;29(3):3001-3010. doi: 10.1364/OE.411449.
Opt Express. 2021.
PMID: 33770908
Free article.
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