Multistate memory devices based on free-standing VO2/TiO2 microstructures driven by Joule self-heating

Luca Pellegrino; Nicola Manca; Teruo Kanki; Hidekazu Tanaka; Michele Biasotti; Emilio Bellingeri; Antonio Sergio Siri; Daniele Marré

doi:10.1002/adma.201104669

Multistate memory devices based on free-standing VO2/TiO2 microstructures driven by Joule self-heating

Adv Mater. 2012 Jun 5;24(21):2929-34. doi: 10.1002/adma.201104669. Epub 2012 Apr 23.

Authors

Luca Pellegrino¹, Nicola Manca, Teruo Kanki, Hidekazu Tanaka, Michele Biasotti, Emilio Bellingeri, Antonio Sergio Siri, Daniele Marré

Affiliation

¹ CNR-SPIN, Corso Perrone 24, Genova, 16152, Italy. luca.pellegrino@spin.cnr.it

PMID: 22528823
DOI: 10.1002/adma.201104669

Abstract

Two-terminal multistate memory elements based on VO(2)/TiO(2) thin film microcantilevers are reported. Volatile and non-volatile multiple resistance states are programmed by current pulses at temperatures within the hysteretic region of the metal-insulator transition of VO(2). The memory mechanism is based on current-induced creation of metallic clusters by self-heating of micrometric suspended regions and resistive reading via percolation.

Publication types

Research Support, Non-U.S. Gov't

MeSH terms

Electric Conductivity
Semiconductors*
Temperature
Titanium / chemistry*
Vanadium Compounds / chemistry*

Substances

Vanadium Compounds
titanium dioxide
Titanium