In this article, we report, as per our knowledge, for the first time, a thin film single junction solar cell with a metasurface absorber layer directly incorporated. We have used an interconnected dual inverted split ring resonator pattern in the InAsP absorber layer. The structure eliminated patterns of conventional metals, such as silver, aluminum, and gold, from the active layer, a common drawback in conventional solar absorbers, hindering their direct integration into solar cells. Optical simulation results show a peak ideal short circuit current density of 76.23mA/cm2 for the meta-absorber structure under solar illumination. This current is the highest among previously reported absorbers based on Group IV materials and III-V compounds, overcoming the low solar absorption of such metasurfaces. The final proposed solar cell structure combines this meta-absorber layer with traditional efficiency enhancement methods namely anti-reflecting coating, textured back reflector, and transparent top electrode. This novel single junction structure shows a solar absorption efficiency of 97.86% and a power conversion efficiency of 30.87%, the highest for III-V solar cells. Our device proves the ability of metasurface absorber layers to produce high-efficiency solar cells and is expected to pave the way for integrating novel meta-devices into state-of-the-art photovoltaic devices, aiding the global transition towards clean energy sources.