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Influence of Morphological Changes in a Source Material on the Growth Interface of 4h-Sic Single Crystals.
Materials (Basel). 2019 Aug 14;12(16):2591. doi: 10.3390/ma12162591.
Materials (Basel). 2019.
PMID: 31416280
Free PMC article.
Optimization of the SiC Powder Source Material for Improved Process Conditions During PVT Growth of SiC Boules.
Ellefsen OM, Arzig M, Steiner J, Wellmann P, Runde P.
Ellefsen OM, et al. Among authors: arzig m.
Materials (Basel). 2019 Oct 8;12(19):3272. doi: 10.3390/ma12193272.
Materials (Basel). 2019.
PMID: 31597332
Free PMC article.
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Comparison of Achievable Contrast Features in Computed Tomography Observing the Growth of a 4H-SiC Bulk Crystal.
Salamon M, Arzig M, Wellmann PJ, Uhlmann N.
Salamon M, et al. Among authors: arzig m.
Materials (Basel). 2019 Nov 6;12(22):3652. doi: 10.3390/ma12223652.
Materials (Basel). 2019.
PMID: 31698806
Free PMC article.
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