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Page 1
High Mobility Thin Film Transistors Based on Amorphous Indium Zinc Tin Oxide.
Materials (Basel). 2017 Jun 26;10(7):702. doi: 10.3390/ma10070702.
Materials (Basel). 2017.
PMID: 28773058
Free PMC article.
Effect of the Active Channel Thickness Variation in Amorphous In-Zn-Sn-O Thin Film Transistor.
Lestari AD, Noviyana I, Putri M, Heo YW, Lee HY.
Lestari AD, et al. Among authors: putri m.
J Nanosci Nanotechnol. 2019 Mar 1;19(3):1686-1689. doi: 10.1166/jnn.2019.16251.
J Nanosci Nanotechnol. 2019.
PMID: 30469246
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Spectroscopic Ellipsometry Characterization of As-Deposited and Annealed Non-Stoichiometric Indium Zinc Tin Oxide Thin Film.
Janicek P, Putri M, Kim KH, Lee HJ, Bouska M, Šlang S, Lee HY.
Janicek P, et al. Among authors: putri m.
Materials (Basel). 2021 Jan 26;14(3):578. doi: 10.3390/ma14030578.
Materials (Basel). 2021.
PMID: 33530567
Free PMC article.
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Influence of Oxygen Partial Pressure on Radio Frequency Magnetron Sputtered Amorphous InZnSnO Thin Film Transistors.
Lestari AD, Putri M, Heo YW, Lee HY.
Lestari AD, et al. Among authors: putri m.
J Nanosci Nanotechnol. 2020 Jan 1;20(1):252-256. doi: 10.1166/jnn.2020.17222.
J Nanosci Nanotechnol. 2020.
PMID: 31383163
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Electrical Properties of Amorphous Indium Zinc Tin Oxide Thin Film Transistor with Y₂O₃ Gate Dielectric.
Jauhari IM, Bak YG, Noviyana I, Putri MA, Lee JA, Heo YW, Lee HY.
Jauhari IM, et al. Among authors: putri ma.
J Nanosci Nanotechnol. 2021 Mar 1;21(3):1748-1753. doi: 10.1166/jnn.2021.18924.
J Nanosci Nanotechnol. 2021.
PMID: 33404442
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DC Magnetron Sputtered IZTO Thin Films for Organic Photovoltaic Application.
Lee HJ, Noviyana I, Putri M, Koo CY, Lee JA, Kim JJ, Jeong Y, Lee Y, Lee HY.
Lee HJ, et al. Among authors: putri m.
J Nanosci Nanotechnol. 2018 Feb 1;18(2):1270-1273. doi: 10.1166/jnn.2018.14927.
J Nanosci Nanotechnol. 2018.
PMID: 29448572
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