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Page 1
4D-STEM at interfaces to GaN: Centre-of-mass approach & NBED-disc detection.
Grieb T, Krause FF, Müller-Caspary K, Ritz R, Simson M, Schörmann J, Mahr C, Müßener J, Schowalter M, Soltau H, Eickhoff M, Rosenauer A. Grieb T, et al. Among authors: eickhoff m. Ultramicroscopy. 2021 Sep;228:113321. doi: 10.1016/j.ultramic.2021.113321. Epub 2021 Jun 17. Ultramicroscopy. 2021. PMID: 34175788
The Role of Polarity in Nonplanar Semiconductor Nanostructures.
de la Mata M, Zamani RR, Martí-Sánchez S, Eickhoff M, Xiong Q, Fontcuberta I Morral A, Caroff P, Arbiol J. de la Mata M, et al. Among authors: eickhoff m. Nano Lett. 2019 Jun 12;19(6):3396-3408. doi: 10.1021/acs.nanolett.9b00459. Epub 2019 May 6. Nano Lett. 2019. PMID: 31039314 Free article.
UV Photosensing Characteristics of Nanowire-Based GaN/AlN Superlattices.
Lähnemann J, Den Hertog M, Hille P, de la Mata M, Fournier T, Schörmann J, Arbiol J, Eickhoff M, Monroy E. Lähnemann J, et al. Among authors: eickhoff m. Nano Lett. 2016 May 11;16(5):3260-7. doi: 10.1021/acs.nanolett.6b00806. Epub 2016 Apr 27. Nano Lett. 2016. PMID: 27104371
Origin of the spectral red-shift and polarization patterns of self-assembled InGaN nanostructures on GaN nanowires.
Ries M, Nippert F, März B, Alonso-Orts M, Grieb T, Hötzel R, Hille P, Emtenani P, Akinoglu EM, Speiser E, Plaickner J, Schörmann J, Auf der Maur M, Müller-Caspary K, Rosenauer A, Esser N, Eickhoff M, Wagner MR. Ries M, et al. Among authors: eickhoff m. Nanoscale. 2023 Apr 13;15(15):7077-7085. doi: 10.1039/d2nr05529e. Nanoscale. 2023. PMID: 36987591
Near-UV optical cavities in Ga2O3 nanowires.
Alonso-Orts M, Chilla G, Hötzel R, Nogales E, San Juan JM, Nó ML, Eickhoff M, Méndez B. Alonso-Orts M, et al. Among authors: eickhoff m. Opt Lett. 2021 Jan 15;46(2):278-281. doi: 10.1364/OL.410757. Opt Lett. 2021. PMID: 33449007
24 results