Mamoru Furuta - Search Results

Year	Number of Results
2012	1
2014	1
2017	2
2018	3
2019	3
2020	4
2021	1
2022	4
2024	0

1

[Development of ADCs Using Molecular Imaging].

Yasunaga M, Manabe S, Tsuji A, Furuta M, Ogata K, Koga Y, Fujiwara Y, Saga T, Matsumura Y. Yasunaga M, et al. Among authors: furuta m. Yakugaku Zasshi. 2017;137(5):535-544. doi: 10.1248/yakushi.16-00255-3. Yakugaku Zasshi. 2017. PMID: 28458285 Free article. Review. Japanese.

2

High-mobility hydrogenated polycrystalline In₂O₃ (In₂O₃:H) thin-film transistors.

Magari Y, Kataoka T, Yeh W, Furuta M. Magari Y, et al. Among authors: furuta m. Nat Commun. 2022 Feb 28;13(1):1078. doi: 10.1038/s41467-022-28480-9. Nat Commun. 2022. PMID: 35228522 Free PMC article.

3

Record-High-Performance Hydrogenated In-Ga-Zn-O Flexible Schottky Diodes.

Magari Y, Aman SGM, Koretomo D, Masuda K, Shimpo K, Makino H, Kimura M, Furuta M. Magari Y, et al. Among authors: furuta m. ACS Appl Mater Interfaces. 2020 Oct 21;12(42):47739-47746. doi: 10.1021/acsami.0c12638. Epub 2020 Oct 13. ACS Appl Mater Interfaces. 2020. PMID: 33047607

4

Epitaxial Perovskite Single-Crystalline Heterojunctions for Filter-Free Ultra-Narrowband Detection with Tunable Spectral Responses.

Pan Y, Wang X, Liao Y, Xu Y, Li Y, Li Q, Zhang X, Chen J, Zhu Z, Zhao Z, Elemike EE, Furuta M, Lei W. Pan Y, et al. Among authors: furuta m. ACS Appl Mater Interfaces. 2022 Oct 27. doi: 10.1021/acsami.2c13126. Online ahead of print. ACS Appl Mater Interfaces. 2022. PMID: 36300824

5

Memristive characteristic of an amorphous Ga-Sn-O thin-film device.

Sugisaki S, Matsuda T, Uenuma M, Nabatame T, Nakashima Y, Imai T, Magari Y, Koretomo D, Furuta M, Kimura M. Sugisaki S, et al. Among authors: furuta m. Sci Rep. 2019 Feb 26;9(1):2757. doi: 10.1038/s41598-019-39549-9. Sci Rep. 2019. PMID: 30808898 Free PMC article.

6

Effect of Fluorine Diffusion on Amorphous-InGaZnO-Based Thin-Film Transistors.

Jiang J, Furuta M. Jiang J, et al. Among authors: furuta m. J Nanosci Nanotechnol. 2018 Aug 1;18(8):5668-5673. doi: 10.1166/jnn.2018.15414. J Nanosci Nanotechnol. 2018. PMID: 29458623

7

Influence of Grain Boundary Scattering on the Field-Effect Mobility of Solid-Phase Crystallized Hydrogenated Polycrystalline In₂O₃ (In₂O₃:H).

Magari Y, Yeh W, Ina T, Furuta M. Magari Y, et al. Among authors: furuta m. Nanomaterials (Basel). 2022 Aug 26;12(17):2958. doi: 10.3390/nano12172958. Nanomaterials (Basel). 2022. PMID: 36079995 Free PMC article.

8

Defect Passivation and Carrier Reduction Mechanisms in Hydrogen-Doped In-Ga-Zn-O (IGZO:H) Films upon Low-Temperature Annealing for Flexible Device Applications.

Velichko R, Magari Y, Furuta M. Velichko R, et al. Among authors: furuta m. Materials (Basel). 2022 Jan 3;15(1):334. doi: 10.3390/ma15010334. Materials (Basel). 2022. PMID: 35009480 Free PMC article.

9

Quantum Confinement Effect in Amorphous In-Ga-Zn-O Heterojunction Channels for Thin-Film Transistors.

Koretomo D, Hamada S, Magari Y, Furuta M. Koretomo D, et al. Among authors: furuta m. Materials (Basel). 2020 Apr 20;13(8):1935. doi: 10.3390/ma13081935. Materials (Basel). 2020. PMID: 32325945 Free PMC article.

10

Quantitative analysis of annealing-induced instabilities of photo-leakage current and negative-bias-illumination-stress in a-InGaZnO thin-film transistors.

Wang D, Furuta M. Wang D, et al. Among authors: furuta m. Beilstein J Nanotechnol. 2019 May 27;10:1125-1130. doi: 10.3762/bjnano.10.112. eCollection 2019. Beilstein J Nanotechnol. 2019. PMID: 33614381 Free PMC article.

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