Direct-bandgap luminescence at room-temperature from highly-strained Germanium nanocrystals

Opt Express. 2010 Mar 29;18(7):7085-91. doi: 10.1364/OE.18.007085.

Abstract

Efficient room-temperature luminescence at optical telecommunication wavelengths and originating from direct band-to-band recombination has been observed in tensile-strained germanium nanocrystals synthesized by mechanical grinding techniques. Selected area electron diffraction, micro-Raman and optical-absorption spectroscopy measurements indicate high tensile-strains while combined photoluminescence spectroscopy, excitation-power evolution and time-resolved measurements suggest direct band-to-band recombination. Such band-engineered germanium nanocrystals offer great possibilities for silicon-photonics integration due to their superb light-emission properties, facile fabrication and compatibility with standard microelectronic processes.

Publication types

  • Research Support, Non-U.S. Gov't
  • Research Support, U.S. Gov't, Non-P.H.S.

MeSH terms

  • Germanium / chemistry
  • Light
  • Luminescence
  • Materials Testing
  • Nanoparticles / chemistry
  • Nanotechnology / methods*
  • Optics and Photonics
  • Semiconductors
  • Spectrophotometry / methods
  • Spectrum Analysis, Raman / methods*
  • Temperature
  • Tensile Strength

Substances

  • Germanium